The field of non-volatile memory technology has achieved another major breakthrough! A joint research team from National Yang-Ming Chiao Tung University in Taiwan, TSMC, and the Industrial Technology Research Institute (ITRI) has successfully developed a spin-orbit torque magnetoresistive random access memory (SOT-MRAM) based on β-phase tungsten. This achievement, published in the top international journal Nature Electronics, boasts a data switching speed of just 1 nanosecond, a retention time exceeding 10 years, and a tunneling magnetoresistance ratio of 146%, clearing a key hurdle for the industrialization of next-generation high-speed, low-power memory technology.According to the research team, the core advantage of SOT-MRAM…